Course syllabus

High Speed Devices

FFF115, 7,5 credits, A (Second Cycle)

Valid for: 2016/17
Decided by: Education Board A
Date of Decision: 2016-04-05

General Information

Main field: Nanoscience.
Language of instruction: The course will be given in English on demand


This course aims at providing fundamental knowledge about the physics of high performance transistors. Specifically, the design and analysis of the high frequency performance of transistors at the nanometer scale is studied.Starting from a mathematical description of electron transport (diffusive and ballistic) in semiconductors, AC and DC transistor models for FETs and HBTs are derived. This models are used for develop transistor scaling laws for optimization of high frequency performance.


Learning outcomes

Knowledge and understanding
For a passing grade the student must

Competences and skills
For a passing grade the student must

Judgement and approach
For a passing grade the student must


Basic semiconductor physics: density of states, band structure and Fermi-Dirac statistics.

Diffusive and ballistic transport in semiconductors.

Hheterostructures in semiconductors - material properties and transport equations.

Small signal models and two-port description.

FETs: Geometric layout. DC and AC models with transcapacitances. Parasitic resistances and capacitances.

HBTs: Heterostructure design and base transport dynamics. DC and AC models .

Scaling theory for FETs.

Examination details

Grading scale: TH
Assessment: Written exam, litterature study presentation and hand in excercise.

Code: 0117. Name: Written Examination.
Credits: 6. Grading scale: TH. Assessment: Passed exam
Code: 0217. Name: Project.
Credits: 1,5. Grading scale: UG. Assessment: Passed project


Required prior knowledge: ESS030 or FFF021 or ETIN70
The number of participants is limited to: No

Reading list

Contact and other information

Course coordinator: Dr. Erik Lind,
Course coordinator: Prof. Lars-Erik Wernersson,
Course homepage: