Course syllabus

Crystal Growth and Semiconductor Epitaxy
Kristalltillväxt och halvledarepitaxi

FAFN15, 7.5 credits, A (Second Cycle)

Valid for: 2024/25
Faculty: Faculty of Engineering LTH
Decided by: PLED F/Pi
Date of Decision: 2024-04-15
Effective: 2024-05-08

General Information

Main field: Nanoscience Depth of study relative to the degree requirements: Second cycle, in-depth level of the course cannot be classified
Elective for: F4, K4-m, MNAV1, N4-nf, N4-m
Language of instruction: The course will be given in English


The aim of the course is that the student, once the course is completed, has aquired knowledge to understand crystal growth and especially semiconductor epitaxy.

Learning outcomes

Knowledge and understanding
For a passing grade the student must

Competences and skills
For a passing grade the student must

Judgement and approach
For a passing grade the student must


This course treats the fundamental aspects of crystal growth, e.g. the thermodynamic prerequisites for crystal growth such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, surface energies, surface diffusion, and Wulff’s theorem are studied. In the course section on epitaxial growth surface reconstructions, lattice mismatch, and dislocations, as well as characterization – both in- and ex-situ are discussed. Growth techniques and reactor models are also dealt with. During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.

Examination details

Grading scale: TH - (U, 3, 4, 5) - (Fail, Three, Four, Five)
Assessment: Assessment takes the form of a written exam at the end of the course. It is mandatory to attend the first lecture in order to be admitted to the course.

The examiner, in consultation with Disability Support Services, may deviate from the regular form of examination in order to provide a permanently disabled student with a form of examination equivalent to that of a student without a disability.

Code: 0107. Name: Crystal Growth and Semiconductor Epitaxy.
Credits: 7.5. Grading scale: TH - (U, 3, 4, 5).


Assumed prior knowledge: FFFF10 Processing and Device Technology, a basic course in thermodynamics and materials science.
The number of participants is limited to: No

Reading list


Course coordinator: Vanya Darakchieva,
Course homepage:

Further information

It is mandatory to attend the first lecture in order to be admitted to the course.