Valid for: 2017/18
Decided by: PLED F/Pi
Date of Decision: 2017-04-06
Main field: Nanoscience.
Elective for: F4, K4-m, N4-nf, N4-m
Language of instruction: The course will be given in English
The aim of the course is to provide necessary knowledge to understand crystal growth and especially semiconductor epitaxy.
Knowledge and understanding
For a passing grade the student must
Competences and skills
For a passing grade the student must
In this course we will carefully treat the fundamental aspects of crystal growth. We will study the thermodynamic prerequisites for crystal growth, such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, we will discuss surface energies, surface diffusion, and Wulff’s theorem. In the course section on epitaxial growth we will discuss surface reconstructions, lattice mismatch, and dislocations, as well as characterization – both in- and ex-situ. We will also deal with growth techniques and reactor models. During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.
Grading scale: TH - (U,3,4,5) - (Fail, Three, Four, Five)
Assessment: Written examination. Compulsory written exercises which can count for bonus points on the final grade, with a passed written exam.
The examiner, in consultation with Disability Support Services, may deviate from the regular form of examination in order to provide a permanently disabled student with a form of examination equivalent to that of a student without a disability.
Required prior knowledge: FFFF10 Processing and Device Technology, a basic course in thermodynamics and materials science.
The number of participants is limited to: No
Course coordinator: Jonas Johansson, jonas.johansson@ftf.lth.se
Course homepage: http://www.ftf.lth.se/education/elective_courses/