Course syllabus

# Höghastighetselektronik High Speed Devices

## EITP01, 7,5 credits, A (Second Cycle)

Valid for: 2017/18
Decided by: PLED E
Date of Decision: 2017-03-27

## General Information

Main field: Nanoscience.
Elective for: E4-fh, F4, F4-hn, F4-nf, MSOC1, N4-hn
Language of instruction: The course will be given in English on demand

## Aim

This course aims at providing fundamental knowledge about the physics of high performance transistors. Specifically, the design and analysis of the high frequency performance of transistors at the nanometer scale is studied.Starting from a mathematical description of electron transport (diffusive and ballistic) in semiconductors, AC and DC transistor models for FETs and HBTs are derived. This models are used for develop transistor scaling laws for optimization of high frequency performance.

## Learning outcomes

Knowledge and understanding
For a passing grade the student must

• describe the operation of HBTs and FETs
• explain the origin of the hybrid-pi model and transcapacitanes.
• understand the difference between diffusive and ballistic transport
• describe relevant high frequency metrics such as ft and fmax
• relate the high frequency performance of a device from the device geometry and materials properties

Competences and skills
For a passing grade the student must

• be able to perform relevant RF and DC calculations on transistors
• apply two-ports for transistor modeling
• calculate the maximum frequency performance of a transistor
• perform simple parameter extractions

Judgement and approach
For a passing grade the student must

• realize the need for device scaling for high performance transistors
• Understand the origins of the maximum frequency performance limits for transistors

## Contents

Basic semiconductor physics: density of states, band structure and Fermi-Dirac statistics.

Diffusive and ballistic transport in semiconductors.

Hheterostructures in semiconductors - material properties and transport equations.

Small signal models and two-port description.

FETs: Geometric layout.  Diffusive and ballistic DC and AC models with transcapacitances. Parasitic resistances and capacitances.

HBTs: Heterostructure design and base transport dynamics. DC and AC models .

Scaling theory for FETs.

## Examination details

Grading scale: TH - (U,3,4,5) - (Fail, Three, Four, Five)
Assessment: Written exam, litterature study presentation and hand in excercises.

The examiner, in consultation with Disability Support Services, may deviate from the regular form of examination in order to provide a permanently disabled student with a form of examination equivalent to that of a student without a disability.

Parts
Code: 0118. Name: Written Examination.
Credits: 6. Grading scale: TH. Assessment: Passed exam
Code: 0218. Name: Hand Ins.
Credits: 0,5. Grading scale: UG. Assessment: Passed project
Code: 0318. Name: Litterature Study.
Credits: 1. Grading scale: UG. Assessment: Presented research article

Required prior knowledge: ESS030/ESSF20 or FFF021/FFN30 or ETIN70
The number of participants is limited to: No
The course overlaps following course/s: FFF115