Course syllabus

High Speed Devices

FFF115, 7,5 credits, A (Second Cycle)

Valid for: 2015/16
Decided by: Education Board A
Date of Decision: 2015-04-10

General Information

Main field: Nanoscience.
Elective for: E4-fh, F4, F4-hn, F4-nf, MSOC1, N4-hn
Language of instruction: The course will be given in English on demand


This course aims at providing fundamental knowledge in design and analysis of the high frequency performance of transistors at the nanometer scale.Starting from a mathematical description of electron transport (diffusive and ballistic) in semiconductors, AC and DC transistor models for FETs and HBTs are derived. This models are used for develop transistor scaling laws for optimization of high frequency performance.


Learning outcomes

Knowledge and understanding
For a passing grade the student must

Competences and skills
For a passing grade the student must

Judgement and approach
For a passing grade the student must


Diffusive and ballistic transport in semiconductors.

Hheterostructures in semiconductors - material properties and transport equations.

Small signal models and two-port description.

HFETs: Geometric layout. DC and AC models with transcapacitances. Parasitic resistances and capacitances.

HBTs: Heterostructure design and base transport dynamics. DC and AC models .

Scaling theory for FETs.

Examination details

Grading scale: TH
Assessment: Written exam, project presentation and laborations.


Required prior knowledge: ESS030 or FFF021 or ETIN70
The number of participants is limited to: No

Reading list

Contact and other information

Course coordinator: Dr. Erik Lind,
Course coordinator: Prof. Lars-Erik Wernersson,
Course homepage: