Course syllabus

Kristalltillväxt och halvledarepitaxi
Crystal Growth and Semiconductor Epitaxy

FAFN15, 7,5 credits, A (Second Cycle)

Valid for: 2014/15
Decided by: Education Board B
Date of Decision: 2014-04-08

General Information

Main field: Nanoscience.
Elective for: F4, K4-m, N4-nf, N4-m
Language of instruction: The course will be given in English


The aim of the course is to provide necessary knowledge to understand crystal growth and especially semiconductor epitaxy.

Learning outcomes

Knowledge and understanding
For a passing grade the student must

Competences and skills
For a passing grade the student must


In this course we will carefully treat the fundamental aspects of crystal growth. We will study the thermodynamic prerequisites for crystal growth, such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, we will discuss surface energies, surface diffusion, and Wulff’s theorem. In the course section on epitaxial growth we will discuss surface reconstructions, lattice mismatch, and dislocations, as well as characterization – both in- and ex-situ. We will also deal with growth techniques and reactor models. During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.

Examination details

Grading scale: TH
Assessment: Written examination. Compulsory written exercises which can count for bonus points on the final grade, with a passed written exam.


Required prior knowledge: FFF110 Processing and Device Technology, a basic course in thermodynamics and materials science.
The number of participants is limited to: No

Reading list

Contact and other information

Course coordinator: Jonas Johansson,
Teacher: Masoomeh Ghasemi,
Course homepage: