Course syllabus

High Speed Devices

FFF115, 7,5 credits, A (Second Cycle)

Valid for: 2013/14
Decided by: Education Board A
Date of Decision: 2013-04-15

General Information

Main field: Nanoscience.
Elective for: E4, E4-hn, F4, F4-hn, F4-nf, MSOC1, N4-hn
Language of instruction: The course will be given in English on demand


Modern electronics such as mobile- and satellite-based communication systems are based on the performance of high-speed devices. This course covers the fundamental design of the heterostructures in key devices within established and emerging technologies. It contains basic modelling of DC and AC properties for HBTs and FETs, but also specific nano electronic applications such as tunnel diodes and ballistic FETs. The lectures are based on a mathematical description of the transport properties within the devices, while state-of-the-art performance devices will be presented as examples.

Learning outcomes

Knowledge and understanding
For a passing grade the student must

Competences and skills
For a passing grade the student must

Judgement and approach
For a passing grade the student must


Semiconductor Heterostructures: Materials properties, transport equations.

HFETs: Basic and advanced models and physical features. DC and AC transistor model and parasitics.

HBTs: Heterostructure design and base transport dynamics. DC and AC models for the transistor and its parasitics.

Scaling theory for HBTs and FETs

Resonant tunneling diodes and ballistic FETs.

Examination details

Grading scale: TH
Assessment: Written exam, project presentation and laborations.


Required prior knowledge: ESS030 or FFF021 or ETIN70
The number of participants is limited to: No

Reading list

Contact and other information

Course coordinator: Dr. Erik Lind,
Course coordinator: Prof. Lars-Erik Wernersson,
Course homepage: