Course syllabus


FFFN15, 7,5 credits, A (Second Cycle)

Valid for: 2012/13
Decided by: Education Board 1
Date of Decision: 2012-03-22

General Information

Elective for: E4, E4-f, E4-hn, F4, F4-f, F4-hn, F4-nf, MFOT1, MNAV1, N4-nf, N4-hn
Language of instruction: The course might be given in English


The course will provide a platform both for the selection of suitable devices for various optoelectronic applications and for the development of next generation devices. In order to achieve this, the course will emphasize the underlying physics as well as how performance is affected by device design and materials properties.

Learning outcomes

Knowledge and understanding
For a passing grade the student must

be able to explain how light and electrons interact in semiconductors

be able to explain concepts such as surface plasmons, photonic band gaps and microcavities

be able to explain the design and the resulting function of different types of LEDs, diode lasers, detectors and camera chips

Competences and skills
For a passing grade the student must

be able to select appropriate light sources and detectors for various optoelectronic applications.

be able to calculate the performance of optical detectors

be able to assimilate and integrate knowledge of scientific literature in the field.


Optical processes in semiconductors, materials properties, charge carrier dynamics

Quantum structures, microcavities, photonic band gaps, surface plasmons

Light emitting devices: LEDs and laser diodes

Light-absorbing devices: detectors, camera chips and solar cells

Examination details

Grading scale: TH
Assessment: Written examination and completed laboratory work.


Required prior knowledge: FFF021 Semiconductor Physics.
The number of participants is limited to: No

Reading list

Contact and other information

Course coordinator: Dan Hessman,
Course coordinator: Ulf Håkanson,
Course homepage: