Syllabus academic year 2009/2010
(Created 2009-08-11.)

Higher education credits: 7,5. Grading scale: TH. Level: A (Second level). Language of instruction: The course will be given in English on demand. Optional for: E4, E4rn, F4, F4nfe, MNAV2, MSOC2, N4, N4nel, N4nf. Course coordinator: Prof Lars-Erik Wernersson, och Dr. Erik Lind,, Fysik, kurslaboratoriet. Recommended prerequisits: FFF021 Semiconductor Physics or FFF110 Processing and Device Technology. Assessment: Written exam and accepted report. Home page:

Modern electronics like mobile- and satellite-based communication systems are based on the design of high-speed devices. This course covers the fundamental design of the heterostructures in key devices within established and emerging technologies. It contains basic modelling of DC and AC properties for HBTs and FETs, but also specific nano electronic applications such as tunnel diodes and ballistic FETs. The lectures are based on a mathematical description of the transport properties within the devices, while state-of-the-art performance devices will be presented as examples.

Knowledge and understanding
For a passing grade the student must

Skills and abilities
For a passing grade the student must

Judgement and approach
For a passing grade the student must

Semiconductor Heterostructures: Materials properties, lateral and vertical transport

HFETs: Basic and advanced models and physical features. DC and AC transistor model and parasitics.

HBTs: Heterostructure design and base transport dynamics. DC and AC models for the transistor and its parasitics.

Scaling theory for HBTs and FETs

Resonant tunneling diodes and ballistic FETs.

Liu, W; Fundamentals of III-V Devices: HBTs, MESFETs and HFETs/HEMTs Wiley Interscience 1999. ISBN 978-0471297000