Syllabus academic year 2009/2010
(Created 2009-08-11.)

Higher education credits: 7,5. Grading scale: TH. Level: G2 (First level). Language of instruction: The course might be given in English. Compulsory for: MNAV1, N3. Optional for: E4, E4dps, E4rn, F4, F4nfe, MFOT2, MSOC2. Course coordinator: Dr. Jonas Johansson,, Fysik, kurslaboratoriet. Recommended prerequisits: FFFF01 Electronic Materials or ESS030 Physics of Devices. Assessment: Written examination. Home page:

The purpose of this course is to provide fundamental knowledge about fabrication and characterization of semiconductor devices on the nanometer scale. The focus is set on modern materials and processing techniques with nanotechnology as a main theme. Most of the processes are general and are applied in traditional Si based IC technology as well as in advanced III-V technology and MEMS/NEMS fabrication.

Knowledge and understanding
For a passing grade the student must

Skills and abilities
For a passing grade the student must

Materials properties of semiconductors. Device fabrication: process overview, comparison between III/V and Si. Processes: Epitaxy, doping, ion implantation, diffusion, etching, lithography. Recent methods as e.g. surface functionalization and nanoimprint lithography will also be treated. Metal-semiconductor interfaces, which are of significant importance in a number of applications will be covered. Fabrication and applications of p-n junction diodes and characterization and modeling of their electronic and optoelectronic properties. Fabrication and properties of heterostructures will be taught and exemplified by the transistors HBT and HFET. Fabrication and principles for MEMS/NEMS (micro/nano-electromechanical systems) will also be treated. In a number of laboratory exercises, some of the covered process steps will be applied in order to make working devices. Since it is highly important that semiconductor processing is carried out in a clean and dust free environment, strong emphasis will be put on clean room work methods. Finally, some advanced semiconductor structures and their properties will be demonstrated.

May, Gary S., Sze, Simon M., Fundamentals of Semiconductor Fabrication, Wiley, 2004 or Sze, S. M., Semiconductor Devices Physics and Technology, Wiley, 2002 and copied material.