Aim
The aim of the course is to provide necessary knowledge to understand crystal growth and especially semiconductor epitaxy.

Knowledge and understanding
For a passing grade the student must

• be able to explain crystal growth and epitaxy and the necessary concepts in thermodynamics and kinetics

• be able to explain the connection between growth parameters and the quality and properties of the grown material

Skills and abilities
For a passing grade the student must

• be able to evaluate and select a crystal growth method, suitable for a specific situation

• be able to scientifically present issues related to crystal growth, orally or in writing

• understand and be able to summarize scientific articles within the subject

Contents
In this course we will carefully treat the fundamental aspects of crystal growth. We will study the thermodynamic prerequisites for crystal growth, such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, we will discuss surface energies, surface diffusion, and Wulff’s theorem. In the course section on epitaxial growth we will discuss surface reconstructions, lattice mismatch, and dislocations, as well as characterization – both in- and ex-situ. We will also deal with growth techniques and reactor models. During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.

Literature
Smith, D. L. Thin-film deposition: principles & practice, McGraw-Hill, 1995, ISBN 0-07-058502-4