Syllabus academic year 2008/2009
(Created 2008-07-17.)

Higher education credits: 7,5. Grading scale: TH. Level: A (Second level). Language of instruction: The course might be given in English. Optional for: E4, E4rn, F4, F4nfe, MNAV4, MSOC2, N4, N4nel, N4nf. Course coordinator: Prof Lars-Erik Wernersson,, Fysik, kurslaboratoriet. Recommended prerequisits: FFF021 Semiconductor Physics or FFF110 Processing and Device Technology. Assessment: Written exam and accepted report. Further information: The course might be given in English. Home page:

Modern electronics like mobile- and satellite-based communication systems are based on the design of high-speed devices. This course covers the fundamental design of the heterostructures in key devices within established and emerging technologies. It contains basic modelling of DC and AC properties for HBTs and FETs, but also was to use tunnel diodes in certain circuit applications. The lectures are based on a mathematical description of the transport properties within the devices, while state-of-the-art performance devices will be presented as examples.

Knowledge and understanding
For a passing grade the student must

Skills and abilities
For a passing grade the student must

Judgement and approach
For a passing grade the student must

Semiconductor Heterostructures: Materials properties, lateral and vertical transport

HFETs: Basic and advanced models and physical features. DC and AC operation.

HBTs: Heterostructure design and base transport dynamics. DC and AC models for the transistor and its parasitics.

CMOS: Basic principles for operation and short-channel effects

Resonant Tunneling and Devices: Physics and applications

Liu, W; Fundamentals of III-V Devices: HBTs, MESFETs and HFETs/HEMTs Wiley Interscience 1999