Syllabus academic year 2008/2009
(Created 2008-07-17.)

Higher education credits: 7,5. Grading scale: TH. Level: A (Second level). Language of instruction: The course might be given in English. FAFN15 overlap following cours/es: FFFN05. Optional for: F4, F4nfe, K4m, MNAV4, N4, N4nf, N4nm. Course coordinator: Jonas Johansson,, Fysik, kurslaboratoriet. Recommended prerequisits: FFF110 Processing and Device Technology, a basic course in thermodynamics and materials science. Assessment: Written examination and project reports.

The aim of the course is to provide necessary knowledge to understand crystal growth and especially semiconductor epitaxy.

Knowledge and understanding
For a passing grade the student must

Skills and abilities
For a passing grade the student must

In this course we will carefully treat the fundamental aspects of crystal growth. We will study the thermodynamic prerequisites for crystal growth, such as chemical potential, construction of binary phase diagrams, supersaturation, and nucleation. Further on, we will discuss surface energies, surface diffusion, and Wulff’s theorem. In the course section on epitaxial growth we will discuss surface reconstructions, lattice mismatch, and dislocations, as well as characterization – both in- and ex-situ. We will also deal with growth techniques and reactor models. During the course, the various moments will be illuminated by examples from modern research, especially research on epitaxy of nanostructures.

Smith, D. L. Thin-film deposition: principles & practice, McGraw-Hill, 1995, ISBN 0-07-058502-4