Syllabus academic year 2007/2008
NANOELECTRONICSFFF160

Higher education credits: 7,5. Grading scale: TH. Level: A (Second level). Language of instruction: The course might be given in English. Compulsory for: N4nel. Optional for: E4rn, F4, F4nfe, N4, N4nf. Course coordinator: Prof. Lars-Erik Wernersson, lars-erik.wernersson@ftf.lth.se, Fysik, kurslaboratoriet. Recommended prerequisits: FFF115 High Speed Devices, FFF042 The Physics of Low-dimensional Structures and Quantum Devices, ETI130 Digital IC-design or ESS020 Analogue Circuits. Assessment: Written exam and oral presentation. Further information: This course may be given in English. Home page: http://www-gu.ftf.lth.se.

Aim
This course deals with the applications of nanoelectronics in a number of areas and it will give knowledge about how devices may be realized and modelled. For instance, the nanotechnology allows for an heterogeneous materials integration of transistors which may be used to reduce the power consumption in circuit applications. The course will use knowledge in the areas of nanotechnology and circuit design. The use of nanowires and nanotubes will be discussed and different device technologies with potential to reduce the power consumption will be emphasized. Challenges in the THz region will further be discussed.

Knowledge and understanding
For a passing grade the student must

Skills and abilities
For a passing grade the student must

Judgement and approach
For a passing grade the student must

Contents
Possibilities and challenges for the Si CMOS technology at and beyond the 20 nm node. Heterogeneous materials integration: High-k dielectrics, epitaxy of materials with large lattice mis-match, nanowires. Electronics based on nanowires and nanotubes och their RF and noise characteristics. Basic limitations for swithcing energies in logics. Single electron transistors, memory devices and QCAs. The THz gap: absorption spectra and damping, imaging system, device technologies, pulsed sources and circuits.High frequency circuits and power consumtion in basic building blocks at high speed.

During the laborations, the students will develop models for nanoelectronic devices and simulate hos these perform in simple circuits. The use of conventional tools that the engineer later will use professionally will be emphazised.

Literature
K. Goser, P. Glösekötter and J. Dienstuhl: Nanoelectronics and Nanosystems, Springer 2004 and lecture notes